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? semiconductor components industries, llc, 2000 november, 2000 rev. 1 1 publication order number: mmdfs6n303/d mmdfs6n303 product preview power mosfet 6 amps, 30 volts nchannel so8, fetky the fetky product family incorporates low r ds(on) , true logic level mosfets packaged with industry leading, low forward drop, low leakage schottky barrier rectifiers to offer high efficiency components in a space saving configuration. independent pinouts for mosfet and schottky die allow the flexibility to use a single component for switching and rectification functions in a wide variety of applications such as buck converter, buckboost, synchronous rectification, low voltage motor control, and load management in battery packs, chargers, cell phones and other portable products. ? power mosfet with low v f ? lower component placement and inventory costs along with board space savings ? logic level gate drive e can be driven by logic ics ? mounting information for so8 package provided ? applications information provided ? r2 suffix for tape and reel (2500 units/13 reel) ? marking: 6n303 mosfet maximum ratings (t j = 25 c unless otherwise noted) (note 1.) rating symbol value unit draintosource voltage v dss 30 vdc draintogate voltage (r gs = 1.0 m ) v dgr 30 vdc gatetosource voltage e continuous v gs 20 vdc drain current (note 2.) continuous @ t a = 25 c single pulse (tp 10 s) i d i dm 6.0 30 adc apk total power dissipation @ t a = 25 c (note 2.) p d 2.0 watts single pulse draintosource avalanche energy e starting t j = 25 c v dd = 30 vdc, v gs = 5.0 vdc, v ds = 20 vdc, i l = 9.0 apk, l = 10 mh, r g = 25 e as 325 mj 1. pulse test: pulse width 250 m s, duty cycle 2.0%. 2. mounted on 2 square fr4 board (1 sq. 2 oz. cu 0.06 thick single sided), 10 sec. max. this document contains information on a product under development. on semiconductor reserves the right to change or discontinue this product without notice. anode 1 2 3 4 8 7 6 5 top view anode source gate cathode cathode drain drain device package shipping ordering information mmdfs6n303r2 so8 2500 tape & reel http://onsemi.com d s g nchannel so8 case 751 style 18 lyww marking diagram 6n303 l = location code y = year ww = work week pin assignment 1 8 6 amperes 30 volts r ds(on) = 35 m v f = 0.42 volts
mmdfs6n303 http://onsemi.com 2 schottky rectifier maximum ratings (t j = 25 c unless otherwise noted) peak repetitive reverse voltage dc blocking voltage v rrm v r 30 volts average forward current (note 2.) (rated v r ) t a = 104 c i o 2.0 amps peak repetitive forward current (note 2.) (rated v r , square wave, 20 khz) t a = 108 c i frm 4.0 amps nonrepetitive peak surge current (surge applied at rated load conditions, halfwave, single phase, 60 hz) i fsm 30 amps thermal characteristics e schottky and mosfet thermal resistance e junctiontoambient (note 3.) e mosfet r ja 167 c/w thermal resistance e junctiontoambient (note 4.) e mosfet r ja 97 thermal resistance e junctiontoambient (note 2.) e mosfet r ja 62.5 thermal resistance e junctiontoambient (note 3.) e schottky r ja 197 thermal resistance e junctiontoambient (note 4.) e schottky r ja 97 thermal resistance e junctiontoambient (note 2.) e schottky r ja 62.5 operating and storage temperature range t j , t stg 55 to 150 2. mounted on 2 square fr4 board (1 sq. 2 oz. cu 0.06 thick single sided), 10 sec. max. 3. mounted with minimum recommended pad size, pc board fr4. 4. mounted on 2 square fr4 board (1 sq. 2 oz. cu 0.06 thick single sided), steady state. mosfet electrical characteristics (t c = 25 c unless otherwise noted) (note 5.) characteristic symbol min typ max unit off characteristics drainsource voltage (v gs = 0 vdc, i d = 0.25 ma) temperature coefficient (positive) v (br)dss 30 e e e e e vdc mv/ c zero gate drain current (v ds = 24 vdc, v gs = 0 vdc) (v ds = 24 vdc, v gs = 0 vdc, t j = 125 c) i dss e e e e 1.0 20 m adc gate body leakage current (v gs = 20 vdc, v ds = 0) i gss e e 100 nadc on characteristics (note 5.) gate threshold voltage (v ds = v gs , i d = 0.25 ma) temperature coefficient (negative) v gs(th) 1.0 e e e e e vdc static drainsource resistance (v gs = 10 vdc, i d = 5.0 adc) (v gs = 4.5 vdc, i d = 3.9 adc) r ds(on) e e 28 42 35 50 m forward transconductance (v ds = 15 vdc, i d = 5.0 adc) g fs e 9.0 e mhos dynamic characteristics input capacitance (v 24 vd v 0 vd c iss e 430 600 pf output capacitance (v ds = 24 vdc, v gs = 0 vdc, f = 1.0 mhz ) c oss e 217 300 reverse transfer capacitance f = 1 . 0 mhz) c rss e 67.5 135 5. pulse test: pulse width 300 m s, duty cycle 2.0%.
mmdfs6n303 http://onsemi.com 3 mosfet electrical characteristics continued (t c = 25 c unless otherwise noted) (note 5.) characteristic symbol min typ max unit switching characteristics (note 6.) turnon delay time t d(on) e 8.2 16.5 ns rise time (v dd = 15 vdc, i d = 1.0 adc, v gs =10vdc t r e 8.5 17 turnoff delay time v gs = 10 vdc, r g = 6.0 w ) t d(off) e 89.6 179 fall time r g 6.0 w ) t f e 61.1 122 gate charge q t e 15.7 31.4 nc (v ds = 15 vdc, i d = 5.0 adc, q 1 e 2.0 e (v ds 15 vdc , i d 5 . 0 adc , v gs = 10 vdc) q 2 e 4.6 e q 3 e 3.9 e drain source diode characteristics forward onvoltage (note 5.) (i s = 1.7 adc, v gs = 0 vdc) v sd e 0.77 1.2 vdc reverse recovery time t rr e 54.5 e ns (v gs =0v i s =50a t a e 14.8 e (v gs = 0 v, i s = 5.0 a, dis/dt = 100 a/ m s) t b e 39.7 e reverse recovery stored charge dis/dt = 100 a/ m s) q rr e 0.048 e m c schottky rectifier electrical characteristics (t c = 25 c unless otherwise noted) maximum instantaneous forward voltage (note 5.) i 100 ad v f t j = 25 c t j = 125 c volts g( ) i f = 100 madc i f = 3.0 adc i f = 6.0 adc 0.28 0.42 0.50 0.13 0.33 0.45 maximum instantaneous reverse current (note 5.) v30v i r t j = 25 c t j = 125 c a () v r = 30 v 250 e e 25 ma maximum voltage rate of change v r = 30 v dv/dt 10,000 v/ s 5. pulse test: pulse width 300 m s, duty cycle 2.0%. 6. switching characteristics are independent of operating junction temperature.
mmdfs6n303 http://onsemi.com 4 typical fet electrical characteristics figure 1. onregion characteristics figure 2. transfer characteristics figure 3. onresistance versus gatetosource voltage figure 4. onresistance versus drain current and gate voltage figure 5. onresistance variation with temperature figure 6. draintosource leakage current versus voltage 1.2 0 v ds , drain-to-source voltage (volts) 12 10 4.0 v gs , gate-to-source voltage (volts) 5.5 1.5 6.0 4.0 2.0 0 8.0 10 2.0 v gs , gate-to-source voltage (volts) 0.3 0.2 0.1 0 i d , drain current (amps) 2.0 1.0 0.05 0.04 0.03 0.02 3.0 -25 25 -50 t j , junction temperature ( c) 1.0 0.2 v ds , drain-to-source voltage (volts) 5.0 30 0 1000 1.0 15 0 i d , drain current (amps) i r 2.0 0 0.6 0.2 0.4 0.8 1.0 1.4 1.6 2.5 3.5 4.5 12 4.0 6.0 4.0 5.0 6.0 7.0 8.0 9.0 , drain-to-source resistance (normalized) r ds(on) 50 100 75 0.6 10 10 i dss , leakage (na) 1.8 , drain current (amps) d , drain-to-source resistance (ohms) ds(on) r , drain-to-source resistance (ohms) ds(on) 125 150 1.4 1.8 v gs = 10 v i d = 6.0 a v gs = 0 v t j = 125 c 100 c t j = 25 c v gs = 4.5 v 10 v t j = 25 c i d = 6.0 a v ds 10 v t j = -55 c 125 c 25 c t j = 25 c 3.3 v v gs = 2.9 v 10 v 4.5 v 3.9 v 2.0 8.0 6.0 3.5 v 100 20 25 8.0 10
mmdfs6n303 http://onsemi.com 5 typical fet electrical characteristics figure 7. capacitance variation figure 8. gatetosource and draintosource voltage versus total charge figure 9. resistive switching time variation versus gate resistance figure 10. diode forward voltage versus current figure 11. maximum rated forward biased safe operating area figure 12. maximum avalanche energy versus starting junction temperature 5.0 30 -10 gate-to-source or drain-to-source voltage (volts) 1200 800 1000 600 q g , total gate charge (nc) 16 0 6.0 4.0 2.0 0 100 1.0 r g , gate resistance (ohms) 1000 100 10 v sd , source-to-drain voltage (volts) 0.5 5.0 4.0 3.0 2.0 1.0 0 0.6 0.1 v ds , drain-to-source voltage (volts) 0.1 0.01 t j , starting junction temperature ( c) 50 150 25 350 300 50 0 1.0 c, capacitance (pf) v 400 200 0 -5.0 0 10 4.0 8.0 12 12 10 0.7 0.8 0.9 , drain current (amps) i d 10 1.0 75 100 125 100 e as , single pulse drain-to-source 15 , gate-to-source voltage (volts) gs t, time (ns) i , source current (amps) s 100 10 100 10 8.0 150 200 250 avalanche energy (mj) i d = 6.0 a v ds = 0 v gs = 0 t j = 25 c v gs = 0 v t j = 25 c c iss c iss c oss c rss c rss i d = 5.0 a t j = 25 c v ds v gs q t q2 q1 q3 t d(off) t d(on) t r t f r ds(on) limit thermal limit package limit dc v gs = 12 v single pulse t c = 25 c v gs v ds 0 30 20 10 20 25 1.0 mounted on 2 sq. fr4 board (1 sq. 2 oz. cu 0.06 thick single sided) with one die operating, 10 s max. 10 ms 1.0 ms
mmdfs6n303 http://onsemi.com 6 typical fet electrical characteristics figure 13. fet thermal response figure 14. diode reverse recovery waveform di/dt t rr t a t p i s 0.25 i s time i s t b t, time (s) rthja(t), effective transient thermal resistance 1.0 0.1 d = 0.5 single pulse 0.00001 0.0001 0.001 0.01 0.1 1.0 10 0.2 0.1 0.05 0.02 0.01 100 1000 0.001 0.01 chip junction 0.0106 0.0253 f 0.0431 0.1406 f 0.1643 0.5064 f 0.3507 2.9468 f 0.4302 177.14 f ambient typical schottky electrical characteristics t j = 125 c figure 15. typical forward voltage figure 16. maximum forward voltage 0.7 0.1 v f , instantaneous forward voltage (volts) 10 1.0 v f , maximum instantaneous forward voltage (volts) 0. 8 0 1.0 0.1 i f , instantaneous forward current (amps) 0.1 0.4 0.2 0.3 0.5 0.6 0.2 0.3 0.4 0.5 10 i f , instantaneous forward current (amps) 0.6 0.7 85 c 25 c -40 c t j = 125 c 25 c 85 c 0.1
mmdfs6n303 http://onsemi.com 7 typical schottky electrical characteristics figure 17. typical reverse current figure 18. maximum reverse current figure 19. typical capacitance figure 20. current derating figure 21. forward power dissipation 15 30 0 v r , reverse voltage (volts) 0.1 0.001 0.01 0.0001 15 20 0 v r , reverse voltage (volts) 1000 100 10 t a , ambient temperature ( c) 20 0 5.0 2.0 1.5 1.0 0.5 0 40 0 i o , average forward current (amps) 1.25 1.00 0.75 0.50 0.25 0 1.0 i r , reverse current (amps) 0.00001 0.000001 5.0 10 5.0 10 60 80 100 120 140 160 , average power dissipation (watts) p fo 2.0 3.0 c, capacitance (pf) i , average forward current (amps) o 5.0 1.50 1.75 15 30 0 v r , reverse voltage (volts) 0.1 0.001 0.01 0.0001 i r , maximum reverse current (amps) 0.00001 0.000001 5.0 10 3.0 3.5 4.0 square wave dc i pk /i o = 5.0 i pk /i o = i pk /i o = 10 i pk /i o = 20 t j = 125 c 25 c t j = 125 c 25 c 85 c freq = 20 khz dc square wave i pk /i o = 5.0 i pk /i o = i pk /i o = 10 i pk /i o = 20 20 25 20 25 2.5 4.5 4.0 25 30
mmdfs6n303 http://onsemi.com 8 typical schottky electrical characteristics figure 22. schottky thermal response t, time (s) rthja(t), effective transient thermal resistance 1.0 0.1 d = 0.5 single pulse 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.2 0.1 0.02 1.0e+02 1.0e+03 0.001 0.01 normalized to r ja at steady state (1 pad) chip junction 0.1010 39.422 f 1.2674 493.26 f 27.987 0.0131 f 30.936 0.2292 f 36.930 2.267 f ambient 0.05 0.01 typical applications load v out c o + - v in + - load v out c o + - v in + - l o l o step down switching regulators buck regulator synchronous buck regulator
mmdfs6n303 http://onsemi.com 9 typical applications load v out c o + - v in + - load v out c o + - v in + - step up switching regulators boost regulator buckboost regulator l1 q1 v in + - multiple battery chargers batt #1 batt #2 d2 d3 q2 q3 buck regulator/charger c o l o q1 d1
mmdfs6n303 http://onsemi.com 10 typical applications lilon battery pack applications battery pack discharge charge smart ic li-ion battery cells pack + pack - schottky schottky q1 q2 ? applicable in battery packs which require a high current level. ? during charge cycle q2 is on and q1 is off. schottky can reduce power loss during fast charge. ? during discharge q1 is on and q2 is off. again, schottky can reduce power dissipation. ? under normal operation, both transistors are on. mm inches 0.060 1.52 0.275 7.0 0.024 0.6 0.050 1.270 0.155 4.0 so8 footprint
mmdfs6n303 http://onsemi.com 11 package dimensions style 18: pin 1. anode 2. anode 3. source 4. gate 5. drain 6. drain 7. cathode 8. cathode seating plane 1 4 5 8 n j x 45 k notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. dimension a and b do not include mold protrusion. 4. maximum mold protrusion 0.15 (0.006) per side. 5. dimension d does not include dambar protrusion. allowable dambar protrusion shall be 0.127 (0.005) total in excess of the d dimension at maximum material condition. a b s d h c 0.10 (0.004) dim a min max min max inches 4.80 5.00 0.189 0.197 millimeters b 3.80 4.00 0.150 0.157 c 1.35 1.75 0.053 0.069 d 0.33 0.51 0.013 0.020 g 1.27 bsc 0.050 bsc h 0.10 0.25 0.004 0.010 j 0.19 0.25 0.007 0.010 k 0.40 1.27 0.016 0.050 m 0 8 0 8 n 0.25 0.50 0.010 0.020 s 5.80 6.20 0.228 0.244 x y g m y m 0.25 (0.010) z y m 0.25 (0.010) z s x s m xxxxxx alyw so8 case 75107 issue v
mmdfs6n303 http://onsemi.com 12 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mmdfs6n303/d fetky is a trademark of international rectifier corporation. north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland

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